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Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET

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Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET
Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET
Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET
Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET
Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET
Z H T original transistor N Channel Enhancement MOS FET HY4008 HY4008W MOSFET

Key attributes

Industry-specific attributes

Model Number
HY4008W
Type
Bipolar Transistor
Brand Name
-
Package Type
Throught Hole

Other attributes

Mounting Type
-
Description
-
Place of Origin
China
Package / Case
TO-247
Type
MOSFET transistor
Series
N-Channel Enhancement Mode MOSFET
D/C
23+
Supplier Type
Original manufacturer, ODM, Agency
Cross Reference
-
Media Available
datasheet, Photo
Brand
HY4008W

Packaging and delivery

Selling Units:
Single item
Single package size:
15X10X9 cm
Single gross weight:
1.000 kg

Lead time

Product descriptions from the supplier

10 - 99 pieces
$0.78
>= 100 pieces
$0.66

Quantity

Shipping

Item subtotal (0 variations 0 items)
$0.00
Shipping total
$0.00
Subtotal
$0.00

Protections for this product

Delivery via

Expect your order to be delivered before scheduled dates or receive a 10% delay compensation

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Standard refund policy

Claim a refund if your order doesn't ship, is missing, or arrives with product issues
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