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PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA

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Sta Refractory (zhengzhou) Co., Ltd. 12 yrs CN
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA
PECVD of TEOS SiO2 VCSEL manufacturing silicon nitride and silicon dioxide RF plasma 1000C tube furnace from professional STA

Key attributes

Industry-specific attributes

voltage
220/380V

Other attributes

type
Resistance Furnace
usage
Heat Treatment Furnace
weight (t)
0.2 T
power (kw)
On request
warranty
1 Year
place of origin
Henan, China
video outgoing-inspection
Provided
machinery test report
Provided
core components
gas delivery system, reactor chamber, energy source, vacuum system, exhaust system
brand name
STA
dimension(l*w*h)
On request
key selling points
Long Service Life
Max temperature
1200℃
Working Temperature
1100℃
Temperature Accuracy
0 ~20 deg C / min
Cooling Rate
0~10C / min
Heating elements
resistance heating element
Thermocouple
K type
Safety feature
safety interlock system
Overheat protection
Power failure protection
Application
diamond graphene film

Packaging and delivery

Selling Units:
Single item
Single package size:
40X15X12 cm
Single gross weight:
1.000 kg
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Lead time

Product descriptions from the supplier

Minimum order quantity: 1 set
$5,000.00-20,000.00

Quantity

Shipping

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Item subtotal (0 variations 0 items)
$0.00 - $0.00
Shipping total
$0.00

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