Place of Origin
Guangdong, China
Supplier Type
Original manufacturer
Media Available
datasheet, EDA/CAD Models
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Resistor - Emitter Base (R2)
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Type
Field-Effect Transistor
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA
